GROWTH OF InP-EPITAXIAL LAYERS : A COMPARISON BETWEEN MOVPE- AND VPE-TECHNIQUES
نویسندگان
چکیده
MOVPE growth of inP with trimethylindium-trimethylphosphane (CH,)3In-P(CH,)3, a metalorganic adduct and phosphane P(CH3)3 are reported. The growth temperature was varied between 500 and 600 C. The growth rate is about 1 2 ym/h. The results of this epitaxial process are compared with results on the PCl3/ln/H2-system. Finally n+/n/n+-structures are used for the fabrication of Gunn oscillators in the frequency range up to 140 GHc
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